New Horizons for Memory Storage: Advancing Non-Volatile Memory with Atomistic Simulations June 29-July1, 2016
|Location : Trinity College Dublin, Ireland
June 29, 2016 – July 1, 2016Organizer
A major driver of the global economy has been the continuous scaling of electronic devices to ever smaller dimensions. The microelectronics industry has used Moore’s law for decades to provide generations of faster and cheaper electronics to consumers (e.g. computers, cell phones, handheld devices). However, this push to smaller dimensions is now hitting key physical barriers that threaten to halt this progress. DRAM and SRAM memories face major challenges related to power dissipation and energy consumption, which grow worse at smaller scales. The continued scaling of Flash memory is also encountering significant barriers due to charge loss and fluctuation at small dimensions. The 2013 ITRS report notes that with float-gate devices, “there is a fundamental issue of non-scalability of tunnel oxide and interpoly dielectric” and that “this geometric limitation will severely challenge scaling far below 20 nm half pitch”. These scaling problems have led several companies (Samsung, Toshiba, SanDisk, Intel- Micron, Hynix) to abandon further Flash device level scaling and instead focus on constructing 3D memory cell architectures.
This workshop focuses on bringing together an international community of researchers from academia, government labs, and industry to discuss how atomistic simulations can help advance non-volatile memory research. The workshop will also help to build greater bonds between industry and academia and inspire future collaborations.
The three-day workshop will begin with a morning session that highlights the current challenges with traditional memory technologies (DRAM, SRAM, Flash). The rest of the workshop will focus the leading candidates for future non-volatile memory. This will include:
- Resistive RAM (Oxide based RAM, Conductive Bridge, and Selector Technology)
- Phase Change Memory (A likely candidate for Intel-Micron’s 3D XPoint Technology)
- Magnetic RAM (Spin Transfer Torque, Spin Orbit Torque)